FORMATION AND CHARACTERIZATION OF NITROGEN IMPLANTED SILICON-ON-INSULATOR STRUCTURE

Abstract

Silicon wafer has been implanted with 200keV14N+ ions to a dose of 0.75 x 10 18N+ /cm2 at a temperature of 600°C and has been annealed at 1300°C for 2 hours. During post-annealing rapid redistribution of the implanted nitrogen results in formation of buried polycrystalline nitride layer under the damage-free (except for few dislocations < 10⁵/cm2) single crystal silicon layer, which is characterized by n type conduction. The buried dielectric has a resistivity of approximately 10⁸ Ωcm. P channel integrated circuit transistors have been fabricated in the buried nitrid area. The measurements of these transistor devices demonstrate the suitability of nitrogen implanted SOl structure for integrated circuit application.