INFLUENCE OF THE IMPURITY ON MORPHOLOGY OF GaSb EPILAYER GROWN ON GaSb(001) PATTERNED SUBSTRATE BY LIQUID PHASE EPITAXY

Abstract

Tellurium (Te) impurity was revealed to have a significant effect on morphology of GaSb epilayer grown on GaSb (001) circular patterned substrates by liquid phase epitaxy. This was clarified by comparing GaSb epilayers with or without Te doping under identical growth conditions. After addition of Te, it was found that (311)B facet appeared instead of (111)B while (111)A was kept. The cross-sectional (110) plane of Te doped GaSb epilayer after stain etching in a permanganate etchant revealed that two boundaries separating differently doped upper and lateral parts of epilayer existed, moreover, some Te impurity striations were found in the lateral part of epilayer while no one was found in upper part. The time-development of growth morphology of Te doped GaSb epilayer was studied. It was found that (311)B facet appeared initially and formed dominantly after 3 hours´ growth and the epilayer in initial state was concave.